IPP100N04S3-03 Infineon Technologies, IPP100N04S3-03 Datasheet - Page 9
IPP100N04S3-03
Manufacturer Part Number
IPP100N04S3-03
Description
MOSFET N-CH 40V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N04S3-03.pdf
(9 pages)
Specifications of IPP100N04S3-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
9600pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000261227
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100N04S3-03
Manufacturer:
NXP
Quantity:
5 000
Part Number:
IPP100N04S3-03
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2007-05-03