IPW90R800C3 Infineon Technologies, IPW90R800C3 Datasheet - Page 2

• Manufacturer Part Number: IPW90R800C3
• Description: MOSFET N-CH 900V 6.9A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R800C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 3.5V @ 460µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 100V
• Power - Max: 104W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.9A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413758

Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
J
=25 °C, unless otherwise specified
J
=25 °C, unless otherwise specified
Symbol Conditions
I
I
dv /dt
Symbol Conditions
R
R
T
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
T
leaded
1.6 mm (0.063 in.)
from case for 10 s
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
page 2
C
j
j
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=25 °C
=V
=900 V, V
=900 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
GS
, I
D
D
=250 µA
D
D
=0.46 mA
DS
=4.1 A,
=4.1 A,
GS
GS
=0 V
=0 V,
=0 V,
min.
900
2.5
-
-
-
-
-
-
-
-
-
Values
Value
0.62
typ.
4.1
1.7
1.3
15
10
4
3
-
-
-
-
-
-
IPW90R800C3
max.
100
260
1.2
3.5
0.8
62
1
-
-
-
-
Unit
A
V/ns
Unit
K/W
°C
V
nA
µA
2008-07-29