IPW90R800C3 Infineon Technologies, IPW90R800C3 Datasheet - Page 5

MOSFET N-CH 900V 6.9A TO-247

IPW90R800C3

Manufacturer Part Number
IPW90R800C3
Description
MOSFET N-CH 900V 6.9A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R800C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
3.5V @ 460µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
104W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
6.9A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000413758

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R800C3
Manufacturer:
Infineon Technologies
Quantity:
135
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IPW90R800C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW90R800C3
Manufacturer:
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Quantity:
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Part Number:
IPW90R800C3FKSA1
Manufacturer:
ALTERA
Quantity:
201
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
DS(on)
=f(V
2.5
1.5
0.5
10
DS
8
6
4
2
0
=f(T
2
1
0
-60
); T
0
J
); I
J
=150 °C
GS
-20
D
=4.1 A; V
5
98 %
20
10
GS
V
T
typ
=10 V
DS
J
60
[°C]
[V]
15
100
4.5 V
4 V
8 V
10 V
20
5 V
140
20 V
6 V
180
page 5
25
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
10
20
15
10
GS
=f(I
8
6
4
2
0
5
0
0
0
); V
D
); T
DS
J
GS
2
=20V
J
=150 °C
4 V
2
4
4.5 V
4
6
V
I
GS
D
[A]
4.8 V
[V]
8
6
150 °C
25 °C
5 V
IPW90R800C3
10
8
12
10 V
2008-07-29
14
10

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