IPW90R800C3 Infineon Technologies, IPW90R800C3 Datasheet - Page 6

MOSFET N-CH 900V 6.9A TO-247

IPW90R800C3

Manufacturer Part Number
IPW90R800C3
Description
MOSFET N-CH 900V 6.9A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R800C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
3.5V @ 460µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
104W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
6.9A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000413758

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R800C3
Manufacturer:
Infineon Technologies
Quantity:
135
Part Number:
IPW90R800C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW90R800C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW90R800C3FKSA1
Manufacturer:
ALTERA
Quantity:
201
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
160
140
120
100
10
80
60
40
20
8
6
4
2
0
0
25
J
0
gate
); I
); I
D
=1.4 A; V
DD
D
=4.1 A pulsed
10
50
DD
20
75
=50 V
Q
T
gate
400 V
J
[°C]
[nC]
100
30
720 V
125
40
150
page 6
50
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
1050
1000
950
900
850
800
10
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
J
J
); I
-20
D
=0.25 mA
0.5
150 °C
20
25 °C
V
T
SD
J
60
1
[°C]
[V]
100
IPW90R800C3
25 °C, 98%
1.5
150 °C, 98%
140
2008-07-29
180
2

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