IPB200N25N3 G Infineon Technologies, IPB200N25N3 G Datasheet - Page 2
![MOSFET N-CH 250V 64A TO263-3](/photos/29/5/290584/to263_sml.jpg)
IPB200N25N3 G
Manufacturer Part Number
IPB200N25N3 G
Description
MOSFET N-CH 250V 64A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB200N25N3_G.pdf
(11 pages)
Specifications of IPB200N25N3 G
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 64A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
4V @ 270µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
7100pF @ 100V
Power - Max
300W
Mounting Type
Surface Mount
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
122 S, 61 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
64 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB200N25N3 G
IPB200N25N3 GTR
IPB200N25N3 GTR
Rev. 2.3
3)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
=64 A
=25 °C
=125 °C
DS
page 2
=V
=200 V, V
=200 V, V
=0 V, I
=20 V, V
=10 V, I
|>2|I
GS
D
, I
|R
D
2
D
=1 mA
D
=270 µA
(one layer, 70 µm thick) copper area for drain
DS(on)max
DS
=64 A
GS
GS
=0 V
=0 V,
=0 V,
IPB200N25N3 G
3)
,
min.
250
61
2
-
-
-
-
-
-
-
-
Values
17.5
typ.
122
0.1
2.4
10
3
1
-
-
-
-
IPP200N25N3 G
IPI200N25N3 G
max.
100
100
0.5
62
40
20
4
1
-
-
-
2010-10-19
Unit
K/W
V
µA
nA
m
S