IPB200N25N3 G Infineon Technologies, IPB200N25N3 G Datasheet - Page 6
![MOSFET N-CH 250V 64A TO263-3](/photos/29/5/290584/to263_sml.jpg)
IPB200N25N3 G
Manufacturer Part Number
IPB200N25N3 G
Description
MOSFET N-CH 250V 64A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB200N25N3_G.pdf
(11 pages)
Specifications of IPB200N25N3 G
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 64A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
4V @ 270µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
7100pF @ 100V
Power - Max
300W
Mounting Type
Surface Mount
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
122 S, 61 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
64 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB200N25N3 G
IPB200N25N3 GTR
IPB200N25N3 GTR
Rev. 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
70
60
50
40
30
20
10
0
DS
=f(T
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=64 A; V
Coss
Crss
40
20
GS
=10 V
V
T
DS
j
60
98%
80
[°C]
[V]
Ciss
typ
100
120
140
180
160
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
4
3
2
1
0
SD
3
2
1
0
-60
)
0
j
); V
D
IPB200N25N3 G
j
GS
-20
=V
0.5
175 °C
DS
20
V
T
270 µA
SD
j
60
[°C]
1
2700 µA
[V]
175°C, 98%
25 °C
25°C, 98%
IPP200N25N3 G
IPI200N25N3 G
100
1.5
140
2010-10-19
180
2