IPB200N25N3 G Infineon Technologies, IPB200N25N3 G Datasheet - Page 7

• Manufacturer Part Number: IPB200N25N3 G
• Description: MOSFET N-CH 250V 64A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB200N25N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 7100pF @ 100V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 122 S, 61 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB200N25N3 G; IPB200N25N3 GTR

13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
290
280
270
260
250
240
230
220
AV
=f(T
-60
); R
j
GS
); I
j(start)
=25
-20
D
=1 mA
20
T
j
60
[°C]
100
140
180
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
10
8
6
4
2
0
gate
0
); I
IPB200N25N3 G
DD
D
=25 A pulsed
20
50 V
Q
gate
40
125 V
[nC]
IPP200N25N3 G
200 V
IPI200N25N3 G
60
80