FDS2170N3 Fairchild Semiconductor, FDS2170N3 Datasheet
FDS2170N3
Manufacturer Part Number
FDS2170N3
Description
MOSFET N-CH 200V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS2170N3.pdf
(6 pages)
Specifications of FDS2170N3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
128 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1292pF @ 100V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS2170N3TR
FDS2170N3_NL
FDS2170N3_NLTR
FDS2170N3_NLTR
FDS2170N3_NL
FDS2170N3_NLTR
FDS2170N3_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS2170N3
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS2170N3*
Manufacturer:
SHARP
Quantity:
4
Company:
Part Number:
FDS2170N3-NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Synchronous rectifier
DC/DC converter
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
N-Channel
FDS2170N3
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
DS(ON)
MOSFET
in a small package.
– Continuous
– Pulsed
FDS2170N3
has
Device
Parameter
been
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
3.0 A, 200 V. R
High performance trench technology for extremely
low R
High power and current handling capability
Fast switching, low gate charge (26nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
DS(ON)
5
6
8
7
Tape width
Drain Contact
DS(ON)
Bottom-side
–55 to +150
12mm
Ratings
200
3.0
3.0
1.8
0.5
20
40
20
= 128 m @ V
January 2004
1
4
3
2
GS
FDS2170N3 Rev C(W)
2500 units
Quantity
= 10 V
Units
C/W
W
V
V
A
C
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Datasheet:
FDS2170N3 Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 13’’ January 2004 = 128 DS(ON) GS Bottom-side Drain Contact Ratings Units 200 3 3.0 W 1.8 –55 to +150 C 40 C/W 0.5 Tape width Quantity 12mm 2500 units FDS2170N3 Rev C(W) ...
Page 2
... CA 40°C/W when 2 mounted on a 1in pad copper Min Typ Max Units =10 A 400 200 231 mV 100 nA –100 4.5 –10 mV/ C 108 128 m 214 268 15 1292 1 2.5 0.76 1 552 nC b) 85°C/W when mounted on a minimum pad copper FDS2170N3 Rev C( ...
Page 3
... Dimensional Outline and Pad Layout FDS2170N3 Rev C(W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 5.5V 6.0V 6.5V 10V DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS2170N3 Rev C( 1.2 ...
Page 5
... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz ISS OSS 40 80 120 160 V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 85°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk Duty Cycle 100 FDS2170N3 Rev C(W) 200 1000 JA ( 1000 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...