FDS2170N3 Fairchild Semiconductor, FDS2170N3 Datasheet - Page 5
![MOSFET N-CH 200V 3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS2170N3
Manufacturer Part Number
FDS2170N3
Description
MOSFET N-CH 200V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS2170N3.pdf
(6 pages)
Specifications of FDS2170N3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
128 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1292pF @ 100V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS2170N3TR
FDS2170N3_NL
FDS2170N3_NLTR
FDS2170N3_NLTR
FDS2170N3_NL
FDS2170N3_NLTR
FDS2170N3_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS2170N3
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS2170N3*
Manufacturer:
SHARP
Quantity:
4
Company:
Part Number:
FDS2170N3-NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
Typical Characteristics
14
12
10
0.001
8
6
4
2
0
0.01
100
Figure 9. Maximum Safe Operating Area.
0.001
0.1
10
0
Figure 7. Gate Charge Characteristics.
0.01
1
0.1
0.1
1
0.001
R
SINGLE PULSE
I
R
D
DS(ON)
= 3.0A
5
V
T
JA
GS
A
= 85
= 25
LIMIT
= 10V
D = 0.5
0.2
o
o
C/W
10
C
0.1
0.05
V
1
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
Q
g
15
, GATE CHARGE (nC)
SINGLE PULSE
0.01
DC
20
10
1s
100ms
Figure 11. Transient Thermal Response Curve.
10ms
V
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
25
DS
= 50V
1ms
100
30
150V
100µs
0.1
35
100V
1000
40
t
1
, TIME (sec)
1
1800
1500
1200
50
40
30
20
10
900
600
300
0
0.01
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
C
OSS
0.1
40
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
t
80
1
, TIME (sec)
C
ISS
10
120
P(pk)
Duty Cycle, D = t
100
T
R
J
R
- T
JA
SINGLE PULSE
JA
(t) = r(t) * R
R
A
t
100
T
= 85 °C/W
1
JA
160
= P * R
A
t
FDS2170N3 Rev C(W)
2
= 85°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
JA
1
JA
(t)
/ t
1000
200
2
1000