FDS2170N3 Fairchild Semiconductor, FDS2170N3 Datasheet - Page 2

• Manufacturer Part Number: FDS2170N3
• Description: MOSFET N-CH 200V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS2170N3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 128 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1292pF @ 100V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2170N3TR; FDS2170N3_NL; FDS2170N3_NLTR; FDS2170N3_NLTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
t
Q
Drain-Source Avalanche Ratings
W
I
R
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
rr
AR
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
drain pins. R
FS
BV
V
G
GS(th)
SD
rr
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
JA
DSS
T
T
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
JC
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
CA
40°C/W when
mounted on a 1in
of 2 oz copper
is determined by the user's board design.
(Note 2)
Single Pulse, V
V
I
V
V
V
V
I
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
D
D
F
T
iF
GS
DS
GS
GS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
A
= 3.0A
2
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
/d
= 25°C unless otherwise noted
pad
= 0 V,
= 160 V,
= 20 V,
= –20 V,
= V
= 10 V,
= 10 V, I
= 10 V,
= 100 V,
= 15 mV, f = 1.0 MHz
= 100 V,
= 10 V,
= 100 V,
= 10 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
D
I
S
= 3.0 A,T
I
V
V
V
I
I
I
V
I
R
I
= 2.5 A
DD
D
D
D
D
D
D
GS
DS
DS
GEN
GS
= 250 A
= 250 A
= 3.0 A
= 3.0 A
= 1 A,
= 3.0 A,
= 200 V, I
= 0 V
= 0 V
= 0 V
= 0 V,
= 6
J
= 125 C
(Note 2)
(Note 2)
D
=10 A
Min
200
b)
2
85°C/W when mounted on
a minimum pad of 2 oz
copper
Typ
1292
0.76
231
–10
108
214
552
1.5
15
72
24
12
30
23
26
10
95
4
5
7
Max Units
–100
400
100
128
268
4.5
2.5
1.2
10
22
10
48
36
36
FDS2170N3 Rev C(W)
1
mV/ C
mV/ C
m
mJ
nC
nC
nC
nA
nA
pF
pF
pF
nC
ns
ns
ns
ns
nS
A
V
V
S
A
V
A