FDP15N50 Fairchild Semiconductor, FDP15N50 Datasheet - Page 2

• Manufacturer Part Number: FDP15N50
• Description: MOSFET N-CH 500V 15A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDP15N50

• Mfg Application Notes: Application Note 6004
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Statics
Dynamics
Avalanche Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
B
Symbol
Q
r
V
B
VDSS
t
Device Marking
DS(ON)
t
C
C
d(OFF)
I
I
C
Q
d(ON)
GS(th)
g(TOT)
Q
E
V
VDSS
Q
DSS
GSS
I
I
g
OSS
RSS
AR
SM
I
t
ISS
t
t
SD
FDH15N50
FDP15N50
FDB15N50
AS
RR
S
rr
fs
gs
gd
r
f
/ T
J
= 25°C, L = 7.0mH, I
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain to Source On-Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
= 15A
Parameter
FDH15N50
FDP15N50
FDB15N50
Device
1
T
J
= 25°C (unless otherwise noted)
2
Package
TO-247
TO-220
TO-263
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
I
I
I
V
V
V
V
V
V
V
V
I
V
I
R
R
V
f = 1MHz
D
Reference to 25
ID = 1mA
D
D
SD
SD
SD
GS
DS
DS
GS
GS
DD
GS
DS
DD
DS
G
D
= 250µA, V
= 15A
= 15A,
= 17
= 15A
= 6.2 ,
= 15A, di
= 15A, di
= 10V, I
= V
= 500V
= 0V
= ±30V
= 10V, I
= 10V,
= 400V,
= 250V,
= 25V, V
Test Conditions
GS
, I
D
D
D
SD
SD
GS
GS
= 7.5A
= 7.5A
= 250µA
/dt = 100A/µs
/dt = 100A/µs
Reel Size
o
T
T
= 0V,
= 0V
330mm
C,
C
C
Tube
Tube
G
= 25
= 150
D
S
o
C
o
C
Min
500
2.0
760
-
-
-
-
-
10
Tape Width
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
-
-
0.58
0.33
Typ
FDH15N50 / FDP15N50 / FDB15N50 RevD2
1850
3.4
0.86
230
470
7.2
5.4
33
12
26
16
-
-
-
-
9
5
5
-
-
-
-
-
±100
Max
0.38
250
4.0
25
730
1.2
6.6
41
10
16
15
15
60
-
-
-
-
-
-
-
-
-
-
-
Quantity
800
30
50
Units
V/°C
µA
nA
nC
nC
nC
pF
mJ
ns
ns
ns
ns
pF
pF
µC
ns
V
V
S
A
A
A
V