FDP15N50 Fairchild Semiconductor, FDP15N50 Datasheet - Page 3

• Manufacturer Part Number: FDP15N50
• Description: MOSFET N-CH 500V 15A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDP15N50

• Mfg Application Notes: Application Note 6004
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
60
50
40
30
20
10
4000
1000
Figure 5. Capacitance vs Drain To Source
100
0
3.0
100
10
10
1
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 100V
1
V
6.5V
5.5V
4.5V
10V
Figure 3. Transfer Characteristics
T
GS
6V
5V
Figure 1. Output Characteristics
J
V
= 25
DESCENDING
3.5
GS
V
V
V
o
= 0V, f = 1MHz
DS
C
GS
DS
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
4.0
Voltage
4.5
TJ = 175
10
10
5.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
C
5.5
C
C
C
ISS
OSS
RSS
TJ = 25
6.0
o
C
100
6.5
100
Figure 6. Gate Charge Waveforms For Constant
15
12
100
9
6
3
0
Figure 4. Normalized Drain To Source On
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
0
1
0
-50
1
Resistance vs Junction Temperature
I
V
T
D
5.5V
4.5V
10V
GS
6V
5V
4V
J
Figure 2. Output Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 15A
= 175
DESCENDING
-25
V
o
10
C
DS
TJ, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
Qg, GATE CHARGE (nC)
Gate Current
25
20
250V
50
100V
10
75
FDH15N50 / FDP15N50 / FDB15N50 RevD2
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
100
400V
= 10V, I
125
40
o
C)
D
= 7.5A
150
50
100
175