FDP15N50 Fairchild Semiconductor, FDP15N50 Datasheet - Page 4

• Manufacturer Part Number: FDP15N50
• Description: MOSFET N-CH 500V 15A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDP15N50

• Mfg Application Notes: Application Note 6004
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 7. Body Diode Forward Voltage vs Body
16
12
30
25
20
15
10
Figure 9. Maximum Drain Current vs Case
8
4
0
5
0
10
10
10
0.3
25
-1
-2
0
10
0.50
-5
0.02
0.20
0.10
0.05
0.01
0.4
V
50
SD
SINGLE PULSE
, SOURCE TO DRAIN VOLTAGE (V)
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
T
C
0.5
, CASE TEMPERATURE (
Diode Current
T
Temperature
75
J
= 175
10
0.6
-4
o
C
100
0.7
125
0.8
o
10
C)
-3
t
150
1
, RECTANGULAR PULSE DURATION (s)
T
0.9
J
= 25
o
C
175
1.0
10
-2
Figure 10. Unclamped Inductive Switching
100
1.0
0.1
10
Figure 8. Maximum Safe Operating Area
50
10
1
0.01
1
If R = 0
t
If R
t
AV
AV
OPERATION IN THIS AREA
LIMITED BY R
= (L)(I
= (L/R)ln[(I
0
V
STARTING T
DS
AS
)/(1.3*RATED BV
t
, DRAIN TO SOURCE VOLTAGE (V)
10
AV
AS
0.1
-1
, TIME IN AVALANCHE (ms)
DS(ON)
*R)/(1.3*RATED BV
10
Capability
J
= 150
DUTY FACTOR, D = t
PEAK T
o
DSS
C
1
- V
FDH15N50 / FDP15N50 / FDB15N50 RevD2
P
D
J
DD
DSS
= (PD X Z
STARTING T
10
)
100
0
- V
t
DD
1
t
2
) +1]
JC
1
X R
J
10
T
/ t
= 25
C
2
JC
= 25
o
) + T
100µs
10ms
1ms
C
DC
o
C
1000
C
10
50
1