FDR840P Fairchild Semiconductor, FDR840P Datasheet - Page 119

• Manufacturer Part Number: FDR840P
• Description: MOSFET P-CH 20V 10A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR840P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4481pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – Hybrid Transistors (Continued)
SuperSOT PNP Configuration
FMBS549
FMB3906
FMB857B
FMB200
FMB2907A
FMBA56
Products
V
CEO
30
40
45
45
60
80
(V)
V
CBO
35
40
50
60
60
80
(V)
V
EBO
5
5
5
6
5
4
(V)
Max (A)
0.2
0.1
0.5
0.6
0.5
I
1
C
Min
100
100
220
100
100
100
2-114
Discrete Power Products –
Max
300
300
475
450
300
–
h
FE
@V
10
CE
2
1
5
1
1
(V) @I
C
500
150
100
10
10
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.25
0.4
0.3
0.4
1.6
@I
V
CE (sat)
2000
C
200
500
100
50
10
(mA) @I
B
200
0.5
20
50
10
5
(mA)