FDR840P Fairchild Semiconductor, FDR840P Datasheet - Page 185
FDR840P
Manufacturer Part Number
FDR840P
Description
MOSFET P-CH 20V 10A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR840P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 4.5V
Input Capacitance (ciss) @ Vds
4481pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR840P
Manufacturer:
FSC
Quantity:
20 000
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Ignition IGBTs
TO-220
ISL9V2040P3
HGTP14N36G3VL
HGTP14N40F3VL
ISL9V3036P3
ISL9V3040P3
HGTP14N37G3VL
HGTP20N35G3VL
ISL9V5036P3
TO-252(DPAK)
ISL9V2040D3S
ISL9V3036D3S
ISL9V3040D3S
TO-262(I
ISL9V5036S3
TO-263(D
ISL9V2040S3S
HGT1S14N36G3VLS
HGTP14N40F3VL
ISL9V3036S3S
ISL9V3040S3S
HGT1S14N37G3VLS
HGT1S20N35G3VLS
HGT1S20N36G3VLS
ISL9V5036S3S
Products
2
2
PAK)
PAK)
Min (V)
BV
390
330
350
330
390
320
320
360
390
330
390
360
390
330
350
330
390
320
320
345
360
CES
I
C
@ 100°C
10
14
14
17
17
18
20
31
10
17
17
31
10
14
14
17
17
18
20
26
31
Typ (V)
1.45
1.45
1.45
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.3
1.6
2-180
2
2
V
CE(sat)
Typ (V)
Test Condition
10A, 4.5V
10A, 4.5V
10A, 4.5V
6A, 4.5V
6A, 4.5V
6A, 4.5V
14A, 5V
14A, 5V
20A, 5V
10A, 4V
10A, 4V
14A, 5V
14A, 5V
20A, 5V
10A, 4V
6A, 4V
6A, 4V
6A, 4V
6A, 4V
6A, 4V
6A, 4V
Discrete Power Products –
t
f
Typ (µs)
2360
2800
2800
2800
2360
2800
2800
2800
2360
2800
2800
2800
–
–
–
–
–
–
–
–
–
Clamping Voltage Typ (V)
420
380
385
360
400
350
350
360
420
360
400
360
420
380
385
360
400
350
350
360
360
IGBTs
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