FQD1P50TM Fairchild Semiconductor, FQD1P50TM Datasheet - Page 3

• Manufacturer Part Number: FQD1P50TM
• Description: MOSFET P-CH 500V 1.2A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD1P50TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 Ohm @ 600mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
600
500
400
300
200
100
10
16
14
12
10
-1
-2
8
6
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
1
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
10
D
10
, Drain Current [A]
V
0
0
GS
= - 20V
V
GS
2
= - 10V
C
C
C
iss
rss
oss
C
C
C
iss
oss
rss
※
= C
= C
= C
10
10
1. 250µ s Pulse Test
2. T
※
Notes :
3
gs
gd
ds
1
1
Note : T
C
+ C
+ C
= 25 ℃
gd
gd
※
(C
1. V
2. f = 1 MHz
Notes :
J
ds
= 25 ℃
= shorted)
GS
= 0 V
4
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.0
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.5
2
25 ℃
150 ℃
150 ℃
4
-V
-V
Q
SD
GS
and Temperature
G
1.0
, Source-Drain Voltage [V]
4
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
25 ℃
V
DS
V
DS
= -400V
DS
= -250V
= -100V
1.5
-55 ℃
6
6
2.0
8
※
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
※
Notes :
Notes :
8
Note : I
DS
GS
= -50V
= 0V
2.5
10
D
= -1.5 A
Rev. B3 January 2009
3.0
10
12