FQD1P50TM Fairchild Semiconductor, FQD1P50TM Datasheet - Page 5

• Manufacturer Part Number: FQD1P50TM
• Description: MOSFET P-CH 500V 1.2A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD1P50TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 Ohm @ 600mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
-10V
-10V
-10V
-10V
12V
12V
t
t
p
p
-3mA
-3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
V
V
I
I
I
DS
DS
DS
DS
Resistive Switching Test Circuit & Waveforms
D
D
D
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
R
R
L
L L
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
-10V
-10V
V
V
V
V
DSS
DSS
I
I
V
V
V
V
GS
GS
DD
DD
AS
AS
GS
GS
DS
DS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
L I
L I
L I
on
on
I
I
D
D
t
t
r
r
AS
AS
AS
(t)
(t)
t
t
2
2
2
Q
Q
p
p
Q
Q
g
g
gd
gd
--------------------
--------------------
Charge
Charge
BV
BV
BV
BV
DSS
DSS
DSS
DSS
- V
- V
t
t
d(off)
d(off)
DD
DD
t
t
Time
Time
off
off
t
t
f
f
Rev. B3, January 2008
V
V
DS
DS
(t)
(t)