NDS9430A Fairchild Semiconductor, NDS9430A Datasheet - Page 4

• Manufacturer Part Number: NDS9430A
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9430A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
-30
-25
-20
-15
-10
-20
-16
-12
-5
-8
-4
0
0
1.6
1.4
1.2
0.8
0.6
-1
0
1
-50
V
GS
Figure 1. On-Region Characteristics
Figure 5. Transfer Characteristics
V
=-10V
DS
Figure 3. On-Resistance Variation
V
I = -5.3A
-25
D
GS
= -10V
-1
= -10V
-V
-2
V
-6.0
GS
DS
0
T , JUNCTION TEMPERATURE (°C)
with Temperature
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-5.0
-2
2 5
-4.5
T = -55°C
J
-3
5 0
-4.0
-3
7 5
2 5
-3.5
-4
1 0 0
-3.0
-4
1 2 5
1 2 5
-5
-5
1 5 0
1.5
0.5
2.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
2
1
3
2
1
1
-50
0
0
V
with Drain Current and Gate Voltage
with Drain Current and Temperature
Figure 6. Gate Threshold Variation
GS
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
-25
= -10V
GS
-4
= -3.5V
-5
0
T , JUNCTION TEMPERATURE (°C)
with Temperature
J
I
I
D
D
, DRAIN CURRENT (A)
25
, DRAIN CURRENT (A)
-8
-10
-4.0V
50
T = 125°C
J
-12
-4.5V
75
-5.0V
25°C
-15
V
100
I
D
DS
-6.0V
-6.0V
-16
= -250µA
= V
-55°C
GS
-10V
125
NDS9430A Rev.A
-20
-20
150