NDS9430A Fairchild Semiconductor, NDS9430A Datasheet - Page 5

• Manufacturer Part Number: NDS9430A
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9430A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
V
GS
3 0 0 0
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1.1
Figure 9. Capacitance Characteristics
0.1
1
Figure 11. Switching Test Circuit
-50
I
D
R
Figure 7. Breakdown Voltage
-25
= -250µA
f = 1 MHz
V
GEN
Variation with Temperature
GS
0.3
= 0 V
-V
T
DS
0
J
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
25
1
50
-V
D
S
DD
75
3
R
L
1 0 0
D U T
(continued)
1 0
125
C iss
V
C oss
C rss
O U T
150
3 0
V
Figure 8. Body Diode Forward Voltage Variation
V
t
0.001
OUT
0.01
d(on)
0.1
IN
20
10
1 0
5
1
8
6
4
2
0
Figure 10. Gate Charge Characteristics
1 0 %
0
0
Figure 12. Switching Waveforms
V
I
GS
D
T = 125°C
= 0V
= -5.3A
J
-V
0.3
t
SD
o n
5 0 %
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
1 0
t
9 0 %
PULSE W IDTH
r
Q
with Source Current and
0.6
g
25°C
, GATE CHARGE (nC)
V
DS
Temperature
= -10V
2 0
t
0.9
d(off)
-55°C
-15V
5 0 %
1.2
-20V
9 0 %
3 0
t
1 0 %
off
9 0 %
NDS9430A Rev.A
1.5
INVERTED
t
f
4 0