BUZ80A Infineon Technologies, BUZ80A Datasheet - Page 2

• Manufacturer Part Number: BUZ80A
• Description: MOSFET N-CH 800V 3.6A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ80AIN

Electrical Characteristics, at T
Semiconductor Group
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 800 V, V
= 800 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 1 mA
D
= 0.25 mA, T
DS
GS
GS
= 2 A
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 °C
= 125 °C
= 25 °C
j
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
min.
-
-
-
-
800
2.1
Values
typ.
-
0.1
10
10
2.5
3
max.
-
4
1
100
100
3
09/96
BUZ 80 A
Unit
V
µA
nA