BUZ80A Infineon Technologies, BUZ80A Datasheet - Page 8

• Manufacturer Part Number: BUZ80A
• Description: MOSFET N-CH 800V 3.6A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ80AIN

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 62.4 mH
340
280
240
200
160
120
960
920
900
880
860
840
820
800
780
760
740
720
mJ
80
40
V
0
-60
20
= (T
D
40
= 3.1 A, V
-20
j
)
60
20
AS
80
DD
= (T
= 50 V
60
100
j
)
120
100
°C
T
T
°C
j
j
160
160
8
Typ. gate charge
V
parameter: I
V
GS
GS
= (Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
10
)
0,2
= 5 A
20
V
DS max
30
40
50
0,8
BUZ 80 A
09/96
V
DS max
nC
Q
Gate
70