BUZ80A Infineon Technologies, BUZ80A Datasheet - Page 5

• Manufacturer Part Number: BUZ80A
• Description: MOSFET N-CH 800V 3.6A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ80AIN

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01, T
Semiconductor Group
D
tot
I
tot
D
= (V
= (T
10
10
10
10
110
90
80
70
60
50
40
30
20
10
W
A
-1
0
2
1
0
DS
10
0
C
0
)
)
20
40
10
1
60
C
= 25°C
80
10
2
100
DC
120
V
t
p = 14.0µs
10
100 µs
1 ms
10 ms
T
V
°C
3
C
DS
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JC
D
= (T
K/W
10
10
10
10
10
10
3.8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
= (t
A
-1
-2
-3
-4
C
1
0
10
0
)
-7
p
)
20
GS
10
single pulse
-6
p
40
10 V
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
D = 0.50
09/96
BUZ 80 A
10
T
t
°C
0.20
0.10
0.05
0.02
0.01
p
C
-1
s
160
10
0