SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 4

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.4
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
=f(t
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
10
10
10
10
10
10
10
10
0
0
-1
-1
-2
-2
1
1
0
0
0
0
P
C
10
10
)
)
-5
-5
0.01
0.01
single pulse
single pulse
0.02
0.02
0.2
0.2
0.1
0.1
0.05
0.05
25
25
0.5
0.5
p
/T
10
10
-4
-4
50
50
T
T
t
t
C
C
75
75
10
10
p
p
[°C]
[°C]
[s]
[s]
-3
-3
100
100
10
10
-2
-2
125
125
10
10
150
150
page 4
-1
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
10
10
10
10
20
20
15
15
10
10
DS
DS
-1
-1
5
5
0
0
2
2
1
1
0
0
); T
1
1
); T
0
0
limited by on-state
limited by on-state
resistance
resistance
C
p
j
=25 °C; t
GS
=25 °C; D =0
5
5
10
10
p
=10 µs
10
10
V
V
V
V
DS
DS
DS
DS
DC
DC
10 V
10 V
[V]
[V]
[V]
[V]
6.5 V
6.5 V
6 V
6 V
5.5 V
5.5 V
5 V
5 V
15
15
100
100
10 ms
10 ms
SPD06N80C3
1 ms
1 ms
100 µs
100 µs
10 µs
10 µs
20
20
20 V
20 V
2008-10-15
1 µs
1 µs
1000
1000
25
25