SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 5

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.4
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
DS(on)
=f(V
2.4
2.4
1.6
1.6
1.2
1.2
0.8
0.8
0.4
0.4
12
12
DS
=f(T
9
6
3
0
2
0
9
6
3
0
2
0
-60
-60
); T
0
0
j
); I
j
=150 °C; t
GS
D
-20
-20
=3.8 A; V
5
5
20
20
98 %
98 %
p
=10 µs
4.5 V
4.5 V
10
10
GS
V
V
T
T
=10 V
DS
DS
j
j
5 V
5 V
60
60
[°C]
[°C]
typ
typ
[V]
[V]
15
15
5.5 V
5.5 V
100
100
20
20
140
140
10 V
10 V
20 V
20 V
6 V
6 V
180
180
25
25
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
4.2
4.2
3.8
3.8
3.4
3.4
2.6
2.6
2.2
2.2
1.8
1.8
1.4
1.4
20
20
15
15
10
10
GS
=f(I
3
3
5
5
0
0
0
0
0
); |V
0
D
); T
DS
j
GS
j
|>2|I
=150 °C
4.5 V
4.5 V
2
2
D
|R
3
3
DS(on)max;
5 V
5 V
4
4
V
V
I
I
GS
GS
D
D
[A]
[A]
[V]
[V]
t
5.5 V
5.5 V
p
6
6
=10 µs
6
6
150 °C
150 °C
SPD06N80C3
25 °C
25 °C
8
8
2008-10-15
6 V
6 V
20 V
20 V
10 V
10 V
10
10
9
9