SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 6

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.4
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
250
250
200
200
150
150
100
100
10
50
50
10
8
6
4
2
0
0
0
8
6
4
2
0
25
j
25
); I
gate
0
0
D
); I
=1.2 A; V
DD
D
=6 A pulsed
50
50
10
10
DD
=50 V
75
75
Q
Q
absolut
absolut
T
T
gate
gate
j
j
160 V
160 V
20
20
[°C]
[°C]
[nC]
[nC]
640 V
640 V
100
100
30
30
125
125
150
150
40
40
page 6
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
10
960
960
920
920
880
880
840
840
800
800
760
760
720
720
680
680
10
10
10
10
10
10
SD
-1
-1
2
2
1
1
0
0
=f(T
-60
-60
); t
0
0
p
=10 µs
j
); I
j
-20
-20
D
=0.25 mA
0.5
0.5
150 °C
150 °C
20
20
V
V
T
T
SD
SD
j
j
60
60
[°C]
[°C]
1
1
25 °C
25 °C
[V]
[V]
100
100
SPD06N80C3
1.5
1.5
140
140
25°C (98°C)
25°C (98°C)
150°C (98%)
150°C (98%)
2008-10-15
180
180
2
2