SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 6

MOSFET N-CH 800V 6A DPAK

SPD06N80C3

Manufacturer Part Number
SPD06N80C3
Description
MOSFET N-CH 800V 6A DPAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPD06N80C3

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3.9V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
785pF @ 100V
Power - Max
83W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
900mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
8 ns
Rise Time
15 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SO000318350
SP000077606
SPD06N80C3INTR
SPD06N80C3T
SPD06N80C3XT
SPD06N80C3XTINTR
SPD06N80C3XTINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD06N80C3
Manufacturer:
infineon
Quantity:
1 503
Part Number:
SPD06N80C3
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
SPD06N80C3
Manufacturer:
ST
0
Part Number:
SPD06N80C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPD06N80C3
Quantity:
3 600
Part Number:
SPD06N80C3ATMA1
Manufacturer:
INFINEON
Quantity:
20 000
Part Number:
SPD06N80C3ATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.4
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
250
250
200
200
150
150
100
100
10
50
50
10
8
6
4
2
0
0
0
8
6
4
2
0
25
j
25
); I
gate
0
0
D
); I
=1.2 A; V
DD
D
=6 A pulsed
50
50
10
10
DD
=50 V
75
75
Q
Q
absolut
absolut
T
T
gate
gate
j
j
160 V
160 V
20
20
[°C]
[°C]
[nC]
[nC]
640 V
640 V
100
100
30
30
125
125
150
150
40
40
page 6
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
10
960
960
920
920
880
880
840
840
800
800
760
760
720
720
680
680
10
10
10
10
10
10
SD
-1
-1
2
2
1
1
0
0
=f(T
-60
-60
); t
0
0
p
=10 µs
j
); I
j
-20
-20
D
=0.25 mA
0.5
0.5
150 °C
150 °C
20
20
V
V
T
T
SD
SD
j
j
60
60
[°C]
[°C]
1
1
25 °C
25 °C
[V]
[V]
100
100
SPD06N80C3
1.5
1.5
140
140
25°C (98°C)
25°C (98°C)
150°C (98%)
150°C (98%)
2008-10-15
180
180
2
2

Related parts for SPD06N80C3