SPD30P06P Infineon Technologies, SPD30P06P Datasheet

MOSFET P-CH 60V 30A DPAK

SPD30P06P

Manufacturer Part Number
SPD30P06P
Description
MOSFET P-CH 60V 30A DPAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPD30P06P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 21.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 1.7mA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000012842
SP000077529
SPD30P06PINTR
SPD30P06PT
SPD30P06PXTINTR
SPD30P06PXTINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD30P06P G
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
SPD30P06PGBTMA1
Manufacturer:
Infineon Technologies
Quantity:
1 000
Rev 2.0
SIPMOS
Features
·
·
·
·
·
Type
SPD30P06P
SPU30P06P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
C
C
C
jmax
C
175°C operating temperature
P-Channel
Avalanche rated
d v /d t rated
= -30 A, V
= -30 A , V
= 25 °C
= 100 °C
= 25 °C
= 25 °C
= 175 °C
DS
Power-Transistor
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
P-TO251-3
P-TO252-3
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
W
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
Pin 1
-55...+175
55/175/56
G
V
R
I
Value
-21.5
D
-120
12.5
250
±20
125
DS
DS(on)
-30
6
SPD30P06P
SPU30P06P
PIN 2/4
D
0.075
2008-02-18
-60
-30
PIN 3
Unit
A
mJ
kV/µs
V
W
°C
S
V
W
A

SPD30P06P Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev 2.0 Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current Symbol puls jmax tot Page 1 SPD30P06P SPU30P06P 0.075 DS(on Pin 1 PIN 2 Value -30 -21.5 -120 250 12.5 6 ±20 125 T -55...+175 stg 55/175/56 2008-02-18 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.0 Symbol °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) Page 2 SPD30P06P SPU30P06P Values min. typ. max thJC - - thJA thJA - - - - Values min. typ. max. - -0.1 ...

Page 3

... 1.6 G Turn-off delay time 1.6 G Fall time 1.6 G Rev 2 °C, unless otherwise specified j Symbol -21 d(on) = -21 -21 d(off) = -21 -21 Page 3 SPD30P06P SPU30P06P Values min. typ. max. 5.2 10.4 - 1228 1535 iss - 387 oss - 142 rss - Unit - S pF 383 177 2008-02-18 ...

Page 4

... Inverse diode forward voltage - Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev 2 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 SPD30P06P SPU30P06P Values min. typ. max 13.8 20 -5.2 Values min. typ. max -120 - -1.3 -1.7 - 64.6 - 153 rr Unit 5 Unit - 230 ...

Page 5

... Rev 2.0 Drain current parameter: V -32 A -24 -20 -16 - °C 190 Transient thermal impedance thJC parameter : K 31.0µ 100 µ -10 - Page 5 SPD30P06P SPU30P06P ) C ³ SPD30P06P 100 120 140 160 ) SPD30P06P D = 0.50 single pulse - 2008-02-18 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 6

... V -8 -10 - Typ. forward transconductance parameter - Page 6 SPD30P06P SPU30P06P = SPD30P06P [ -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 0 -10 -20 -30 - =25° 2008-02 ...

Page 7

... V -25 - Page 7 SPD30P06P SPU30P06P = -1 98% typ 2% -60 -60 -60 -60 -20 -20 -20 - 100 100 100 100 ) µs p SPD30P06P °C typ 175 °C typ °C (98 175 °C (98 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 2008-02-18 °C °C °C °C 180 180 180 180 -2.4 -3.0 ...

Page 8

... Drain-source breakdown voltage (BR)DSS j SPD30P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev 2.0 Typ. gate charge parameter -16 V -12 -10 125 145 °C 185 T j °C 100 140 200 T j Page 8 SPD30P06P SPU30P06P = Gate = -30 A pulsed D SPD30P06P V 0,2 0,8 DS max - max Gate 2008-02-18 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 ). (www.infineon.com Page 9 SPD30P06P SPU30P06P 2008-02-18 ...

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