IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 12
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IPP12CNE8N G
Manufacturer Part Number
IPP12CNE8N G
Description
MOSFET N-CH 85V 67A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CNE8N_G.pdf
(12 pages)
Specifications of IPP12CNE8N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 40V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0129 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP12CNE8NGX
IPP12CNE8NGXK
SP000096467
IPP12CNE8NGXK
SP000096467
Rev. 1.05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Legal disclaimer
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
user or other persons may be endangered.
page 12
IPB12CNE8N G
IPI12CNE8N G
IPD12CNE8N G
IPP12CNE8N G
2007-08-29