IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 7
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IPP12CNE8N G
Manufacturer Part Number
IPP12CNE8N G
Description
MOSFET N-CH 85V 67A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CNE8N_G.pdf
(12 pages)
Specifications of IPP12CNE8N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 40V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0129 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP12CNE8NGX
IPP12CNE8NGXK
SP000096467
IPP12CNE8NGXK
SP000096467
Rev. 1.05
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
100
1
95
90
85
80
75
AV
1
-60
=f(T
); R
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[μs]
[°C]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
IPB12CNE8N G
=67 A pulsed
g s
IPI12CNE8N G
10
20
Q
Q
gate
g
Q
sw
[nC]
Q
30
g d
IPD12CNE8N G
IPP12CNE8N G
20 V
40
60 V
Q
40 V
g ate
2007-08-29
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