IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 5

• Manufacturer Part Number: IPP12CNE8N G
• Description: MOSFET N-CH 85V 67A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 40V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0129 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP12CNE8NGX; IPP12CNE8NGXK; SP000096467

Rev. 1.05
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
250
200
150
100
250
200
150
100
50
50
DS
GS
0
0
0
0
); T
); |V
j
=25 °C
DS
j
GS
|>2|I
1
2
D
|R
10 V
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
V
V
GS
DS
4
6.5 V
[V]
[V]
8 V
175 °C
3
7 V
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
80
60
40
20
30
25
20
15
10
D
=f(I
5
0
0
); T
0
0
D
j
); T
=25 °C
GS
IPB12CNE8N G
j
=25 °C
IPI12CNE8N G
5 V
20
20
I
I
D
D
40
40
[A]
[A]
5.5 V
IPD12CNE8N G
IPP12CNE8N G
60
60
10 V
6 V
2007-08-29
80
80