IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 5
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IPP12CNE8N G
Manufacturer Part Number
IPP12CNE8N G
Description
MOSFET N-CH 85V 67A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CNE8N_G.pdf
(12 pages)
Specifications of IPP12CNE8N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 40V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0129 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP12CNE8NGX
IPP12CNE8NGXK
SP000096467
IPP12CNE8NGXK
SP000096467
Rev. 1.05
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
250
200
150
100
250
200
150
100
50
50
DS
GS
0
0
0
0
); T
); |V
j
=25 °C
DS
j
GS
|>2|I
1
2
D
|R
10 V
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
V
V
GS
DS
4
6.5 V
[V]
[V]
8 V
175 °C
3
7 V
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
80
60
40
20
30
25
20
15
10
D
=f(I
5
0
0
); T
0
0
D
j
); T
=25 °C
GS
IPB12CNE8N G
j
=25 °C
IPI12CNE8N G
5 V
20
20
I
I
D
D
40
40
[A]
[A]
5.5 V
IPD12CNE8N G
IPP12CNE8N G
60
60
10 V
6 V
2007-08-29
80
80