SI3200-G-GS Silicon Laboratories Inc, SI3200-G-GS Datasheet - Page 15

• Manufacturer Part Number: SI3200-G-GS
• Description: SLIC 2-CH 63dB 45mA 3.3V 6-Pin SMD
• Manufacturer: Silicon Laboratories Inc
• Series: ProSLIC®r

Specifications of SI3200-G-GS

• Package: 6SMD
• Number Of Channels Per Chip: 2
• Polarity Reversal: Yes
• Longitudinal Balanced: 63 dB
• Loop Current: 45 mA
• Minimum Operating Supply Voltage: 3.13 V
• Typical Operating Supply Voltage: 3.3 V
• Typical Supply Current: 0.11 mA
• Function: Subscriber Line Interface Concept (SLIC), CODEC
• Interface: GCI, PCM, SPI
• Number Of Circuits: 2
• Voltage - Supply: 3.3V, 5V
• Current - Supply: 110µA
• Power (watts): 941mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Includes: Battery Switching, BORSCHT Functions, DTMF Generation and Decoding, FSK Tone Generation, Modem and Fax Tone Detection
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9. DC Characteristics (V
(V
Table 8. Si3200/2 Characteristics
(V
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU Internal
Pullup Resistance
Relay Driver Source
Impedance
Relay Driver Sink
Impedance
Input Leakage Current
Parameter
TIP/RING Pulldown Transistor Satura-
tion Voltage
TIP/RING Pullup Transistor
Saturation Voltage
Battery Switch Saturation
Impedance
OPEN State TIP/RING Leakage Current
Internal Blocking Diode Forward Voltage
Notes:
DD
DD
1. V
2. I
, V
=
DD1
3.13 to 5.25 V, T
OUT
AC
– V
=
= 60 mA.
DD4
2.5 V
=
PK
4.75 to 5.25 V, T
, R
A
LOAD
=
Symbol
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
R
V
V
R
V
V
=
OUT
I
OH
OL
IH
L
IL
IN
600 Ω.
A
DD
=
GPOa/b, TRD1a/b,TRD2a/b:
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
, V
DTX, SDO, INT, SDITHRU:
DD1
BATSELa/b, RRDa/b,
V
V
DD1
DD1
Symbol
Test Condition
R
–V
V
V
I
LKG
I
V
SAT
I
O
I
I
CM
OV
–V
–V
I
O
O
O
F
O
DD4
= –40 mA
= –8 mA
< 28 mA
< 85 mA
DD4
DD4
= 8 mA
=
I
(V
= 4.75 V
= 4.75 V
Rev. 1.3
LIM
5 V)
BAT
GND – V
V
V
GND – V
V
RING
= 22 mA, I
TIP
BAT
– V
I
Test Condition
ABIAS
I
I
I
– V
LIM
LIM
LIM
– V
– V
BATH
R
RING
BAT
L
= 22 mA
= 45 mA
= 45 mA,
TIP
BATL
BAT
= 16 mA
= 0 Ω
)/I
ABIAS
Si3220/25 Si3200/02
(Reverse)
(Forward)
OUT
(Forward)
(Reverse)
(Note 2)
0.7 x
V
DD
Min
1
1
= 4 mA
20
(Note 2)
—
—
—
—
—
—
1
– 0.6
V
DD
1
Typ
Min
30
63
—
—
—
—
—
11
—
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
0.8
15
⎯
3
3
4
4
0.3 x
Max
5.25
0.72
±10
0.4
—
—
—
—
Max
100
V
⎯
—
⎯
—
⎯
⎯
DD
Unit
Unit
µA
kΩ
µA
Ω
V
V
V
V
V
V
V
V
V
V
Ω
Ω
15