MPSH11 Fairchild Semiconductor, MPSH11 Datasheet - Page 2

• Manufacturer Part Number: MPSH11
• Description: TRANSISTOR RF NPN TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
rb 묬
Symbol
CBO
EBO
T
FE
rb
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Typical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
on
sat
c
300
250
200
150
100
)
)
50
0
0.01
V
CE
Common-Base Feedback Capacitance V
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Collector Base Time Constant
= 5V
vs Collector Current
I - COLLECTOR CURRENT (mA)
C
DC Current Gain
0.1
125 °
25
Parameter
C
1
- 40 °C
10
TA = 25°C unless otherwise noted
100
I
I
I
V
V
I
I
I
I
f = 100 MHz
V
I
f = 31.8 MHz
C
C
E
C
C
C
C
C
CB
CB
EB
CB
= 1.0 mA, I
= 100 A, I
= 10 A, I
= 4.0 mA, V
= 4.0 mA, I
= 4.0 mA, V
= 4.0 mA, V
= 4.0 mA, V
= 10 V, I
= 25 V, I
= 2.0 V, I
= 10 V, I
Test Conditions
C
E
E
E
0.15
0.05
B
C
B
E
= 0
= 0, f = 1.0 MHz
0.2
0.1
CE
CE
CE
CB
= 0, f = 1.0 MHz
= 0
= 0
= 0.4 mA
= 0
= 0
0.1
= 10 V
= 10 V
= 10 V,
= 10 V,
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
I
- 40 °C
C
- COLLECTOR CURRENT (mA)
1
Min
NPN RF Transistor
650
3.0
0.6
25
30
60
25
Max
0.95
100
100
0.5
0.7
0.9
9.0
MPSH11/MMBTH11, Rev. B
10
125 °
(continued)
C
Units
20 30
MHz
nA
nA
pF
pF
pS
V
V
V
V
V
3