MPSH11 Fairchild Semiconductor, MPSH11 Datasheet - Page 4

• Manufacturer Part Number: MPSH11
• Description: TRANSISTOR RF NPN TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Common Emitter Y Parameters
500
200
100
14
12
10
28
24
20
16
12
10
8
6
4
2
0
8
4
0
1
0
0
0
I = 7.0 mA
f = 200 MHz
V
f = 45 MHz
C
V
Forward Transfer Admittance
f = 45 MHz
CE
CE
b
= 15V
= 15V
-b
ie
4
vs Collector Current
fe
I - COLLECTOR CURRENT (mA)
Input Admittance vs
Input Admittance vs
I - COLLECTOR CURRENT (mA)
4
4
C
C
Collector Current
V
Collector Voltage
CE
- COLLECTOR VOLTAGE
g
g
8
ie
ie
8
8
12
12
12
16
g
b
fe
ie
16
16
20
24
20
20
24
20
16
12
20
16
12
120
100
8
4
0
8
4
0
80
60
40
20
50
0
0
V
I = 7.0 mA
V
f = 200 MHz
0
C
CE
Forward Transfer Admittance
CE
V
f = 200 MHz
CE
= 15V
= 10V
= 10V
I - COLLECTOR CURRENT (mA)
Input Admittance vs
Input Admittance vs
vs Collector Current
2
I - COLLECTOR CURRENT (mA)
C
100
2
C
Collector Current
f - FREQUENCY (MHz)
Frequency
g
ie
b
4
4
ie
200
NPN RF Transistor
-b
b
g
g
ie
fe
ie
fe
6
6
500
MPSH11/MMBTH11, Rev. B
8
8
(continued)
1000
10
10
3