MPSH11 Fairchild Semiconductor, MPSH11 Datasheet - Page 7

• Manufacturer Part Number: MPSH11
• Description: TRANSISTOR RF NPN TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Test Circuits
200 mHz
Input
FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit
100 pF
L1
1000 pF
2.2 K
V
BB
R
S
1000 pF
R
L
390
L2
270
V
1000 pF
1000 pF
0.8-10 pF
CC
= 12 V
L1 - Ohmite Z-235 RFC
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1
1/2 turns from cold side
200 mHz Output into
50
NPN RF Transistor
MPSH11/MMBTH11, Rev. B
(continued)