BGB 540 E6327 Infineon Technologies, BGB 540 E6327 Datasheet - Page 3

• Manufacturer Part Number: BGB 540 E6327
• Description: TRANSISTOR RF ACT BIAS SOT-343
• Manufacturer: Infineon Technologies

Specifications of BGB 540 E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 16dB ~ 17.5dB
• Power - Max: 120mW
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Other names: BGB540E6327XT; SP000013194

BGB420
Data sheet
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For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
Subjects (major changes since last revision)
S-Parameter table added
Figure “Output Compression Point” added
SPICE Model added
2001-08-10
2000-11-28