BGB 540 E6327 Infineon Technologies, BGB 540 E6327 Datasheet - Page 5

• Manufacturer Part Number: BGB 540 E6327
• Description: TRANSISTOR RF ACT BIAS SOT-343
• Manufacturer: Infineon Technologies

Specifications of BGB 540 E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 16dB ~ 17.5dB
• Power - Max: 120mW
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Other names: BGB540E6327XT; SP000013194

Data sheet
Maximum Ratings
Parameter
Maximum collector-emitter voltage
Maximum collector current
Maximum bias current
Maximum emitter-base voltage
Maximum base current
Total power dissipation, T
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance: junction-soldering point
Notes:
For detailed symbol description refer to figure 1.
1)
T
S
is measured on the emitter lead at the soldering point to the PCB
S
< 107°C
Fig. 1: Symbol definition
Bias
1)
Bias,4
I
Bias
B,1
I
5
B
V
EB
Symbol
R
T
V
I
V
T
P
Bias
th JS
I
T
STG
I
OP
CE
C
EB
B
tot
j
E,2
C,3
I
C
V
CE
-65 ... +150
-40 ..+85
Value
<270
120
150
3.5
1.5
0.7
30
3
2001-08-10
BGB420
Unit
K/W
mW
mA
mA
mA
°C
°C
°C
V
V