PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet

PBSS4350SPN,115

Manufacturer Part Number

PBSS4350SPN,115

Description

TRANS NPN/PNP W/RES 50V 8SOIC

Manufacturer

NXP Semiconductors

Datasheet

1.PBSS4350SPN115.pdf (19 pages)

Specifications of PBSS4350SPN,115

Package / Case

8-SOIC (3.9mm Width)

Transistor Type

NPN, PNP

Current - Collector (ic) (max)

2.7A

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A

Current - Collector Cutoff (max)

100nA

Dc Current Gain (hfe) (min) @ Ic, Vce

300 @ 1A, 2V / 180 @ 1A, 2V

Power - Max

750mW

Mounting Type

Surface Mount

Minimum Operating Temperature

- 65 C

Configuration

Dual Common Collector

Transistor Polarity

NPN/PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

50 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

2.7 A

Power Dissipation

1430 mW

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

934061033115
PBSS4350SPN T/R
PBSS4350SPN T/R

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

PBSS4350SPN,115

Manufacturer:

NXP

Quantity:

102 000

Current page: 1 of 19
Download datasheet (134Kb)

1. Product proﬁle

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

NPN/PNP double low V

power Surface-Mounted Device (SMD) plastic package.

Table 1.

Table 2.

Type number

PBSS4350SPN

Symbol Parameter

TR1; NPN low V

CEO

CEsat

PBSS4350SPN

50 V, 2.7 A NPN/PNP low V

Rev. 01 — 5 April 2007

Low collector-emitter saturation voltage V

High collector current capability I

High collector current gain (h

High efﬁciency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Complementary MOSFET driver

Half and full bridge motor drivers

Dual low power switches (e.g. motors, fans)

Automotive

collector-emitter voltage

collector current

peak collector current

collector-emitter

saturation resistance

Product overview

Quick reference data

CEsat

Package

NXP

SOT96-1

transistor

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium

Conditions

open base

single pulse;

) at high I

Name

SO8

= 200 mA

= 2 A;

and I

1 ms

CEsat

(BISS) transistor

[1]

NPN/NPN

complement

PBSS4350SS

Min

Typ

Product data sheet

PNP/PNP

complement

PBSS5350SS

Max

2.7

130

Unit

Related parts for PBSS4350SPN,115

PBSS4350SPN,115 Summary of contents

Page 1

PBSS4350SPN 50 V, 2.7 A NPN/PNP low V Rev. 01 — 5 April 2007 1. Product proﬁle 1.1 General description NPN/PNP double low V power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4350SPN 1.2 Features I Low collector-emitter ...

Page 2

... NXP Semiconductors Table 2. Symbol Parameter TR2; PNP low V V CEO CEsat [1] Pulse test Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS4350SPN 4. Marking Table 5. Type number PBSS4350SPN PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V Quick reference data …continued Conditions ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 4

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V 2.5 P tot (W) (1) 2.0 1.5 (2) 1.0 (3) 0 standard footprint Rev. 01 — 5 April 2007 ...

Page 5

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al ...

Page 6

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) (K/W) 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = ...

Page 7

... NXP Semiconductors 7. Characteristics Table unless otherwise speciﬁed. amb Symbol Parameter TR1; NPN low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off C c PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V Characteristics Conditions transistor CEsat collector-base cut-off current 150 C j collector-emitter ...

Page 8

... NXP Semiconductors Table unless otherwise speciﬁed. amb Symbol Parameter TR2; PNP low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off C c [1] Pulse test: t PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V Characteristics …continued Conditions transistor CEsat collector-base cut-off current ...

Page 9

... NXP Semiconductors 1000 h FE (1) 800 (2) 600 400 (3) 200 ( 100 C amb ( amb ( amb Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) ( amb ( amb ( 100 C amb Fig 7. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values ...

Page 10

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 11. TR1 (NPN): Collector-emitter saturation resistance as a function of collector current; typical values PBSS4350SPN_1 Product data sheet ...

Page 11

... NXP Semiconductors 600 h FE (1) 400 (2) 200 ( ( 100 C amb ( amb ( amb Fig 13. TR2 (PNP): DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) ( amb ( amb ( 100 C amb Fig 15. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values PBSS4350SPN_1 Product data sheet ...

Page 12

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 17. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 19. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBSS4350SPN_1 Product data sheet ...

Page 13

... NXP Semiconductors 8. Test information Fig 21. TR1 (NPN): BISS transistor switching time deﬁnition Fig 22. TR1 (NPN): Test circuit for switching times PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low (probe) oscilloscope 450 100 mA Bon Boff Rev. 01 — 5 April 2007 PBSS4350SPN CEsat I (100 %) ...

Page 14

... NXP Semiconductors Fig 23. TR2 (PNP): BISS transistor switching time deﬁnition Fig 24. TR2 (PNP): Test circuit for switching times PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low (probe) oscilloscope 450 100 mA Bon Rev. 01 — 5 April 2007 PBSS4350SPN CEsat I (100 %) Bon I Boff off ...

Page 15

... NXP Semiconductors 9. Package outline Fig 25. Package outline SOT96-1 (SO8) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4350SPN [1] For further information and the availability of packing methods, see PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V 5 ...

Page 16

... NXP Semiconductors 11. Soldering Fig 26. Reﬂow soldering footprint SOT96-1 (SO8) Fig 27. Wave soldering footprint SOT96-1 (SO8) PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V 5.50 0. solder lands occupied area placement accuracy 5.50 board direction solder lands solder resist placement accurracy ...

Page 17

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4350SPN_1 20070405 PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Supersedes - © NXP B.V. 2007. All rights reserved. ...

Page 18

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail ...

Page 19

... NXP Semiconductors 15. Contents 1 Product proﬁ 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 Revision history ...

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