PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
PBSS4350SPN_1
Product data sheet
Table 8.
T
[1]
Symbol Parameter
TR2; PNP low V
I
I
I
h
V
R
V
V
t
t
t
t
t
t
C
CBO
CES
EBO
d
r
on
s
f
off
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance V
Characteristics
p
CEsat
300 s;
transistor
Rev. 01 — 5 April 2007
0.02.
…continued
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
I
I
f = 1 MHz
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2.7 A; I
= 2 A; I
= 2 A; I
= 2.7 A; I
= 100 mA;
= 100 mA
= 5 V; I
= 50 V; I
= 50 V; I
= 50 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
50 V, 2.7 A NPN/PNP low V
B
B
B
B
B
C
= 50 mA
= 100 mA
= 200 mA
= 200 mA
= 100 mA
C
C
C
C
C
B
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 270 mA
= 270 mA
= 100 mA
= 500 mA
= 1 A
= 2 A
= 2.7 A
= 1 A
BE
= 0 A
= 0 A;
= i
= 2 A;
= 0 V
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
PBSS4350SPN
Min
-
-
-
-
200
200
180
130
95
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CEsat
Typ
-
-
-
-
340
290
250
180
135
95
9
54
63
190
50
240
25
60
125
225
190
255
0.95
1
0.8
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
-
-
-
-
-
140
-
-
-
-
-
-
35
100
50
100
100
90
180
320
280
370
1.1
1.2
1.2
8 of 19
Unit
nA
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
ns
ns
ns
ns
ns
ns
pF
A