PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
5. Limiting values
PBSS4350SPN_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
Per device
P
T
T
T
C
CM
B
j
amb
stg
CBO
CEO
EBO
tot
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 01 — 5 April 2007
2
O
3
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
, standard footprint.
50 V, 2.7 A NPN/PNP low V
p
amb
amb
1 ms
25 C
25 C
PBSS4350SPN
[1]
[2]
[3]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
CEsat
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
50
50
5
2.7
5
0.5
0.55
0.87
1.43
0.75
1.2
2
150
+150
+150
Unit
V
V
V
A
A
A
W
W
W
W
W
W
C
C
C
2
.
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