PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 2

TRANS NPN/PNP W/RES 50V 8SOIC

PBSS4350SPN,115

Manufacturer Part Number
PBSS4350SPN,115
Description
TRANS NPN/PNP W/RES 50V 8SOIC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4350SPN,115

Package / Case
8-SOIC (3.9mm Width)
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
2.7A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 1A, 2V / 180 @ 1A, 2V
Power - Max
750mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual Common Collector
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2.7 A
Power Dissipation
1430 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061033115
PBSS4350SPN T/R
PBSS4350SPN T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4350SPN,115
Manufacturer:
NXP
Quantity:
102 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS4350SPN_1
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
Symbol Parameter
TR2; PNP low V
V
I
I
R
Pin
1
2
3
4
5
6
7
8
Type number
PBSS4350SPN
Type number
PBSS4350SPN
C
CM
CEO
CEsat
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Quick reference data
Pinning
Ordering information
Marking codes
p
Description
emitter TR1
base TR1
emitter TR2
base TR2
collector TR2
collector TR2
collector TR1
collector TR1
CEsat
300 s;
Package
Name
SO8
transistor
Rev. 01 — 5 April 2007
0.02.
Description
plastic small outline package; 8 leads; body width
3.9 mm
…continued
Marking code
4350SPN
Conditions
open base
single pulse;
t
I
I
p
C
B
= 200 mA
= 2 A;
50 V, 2.7 A NPN/PNP low V
1 ms
Simplified outline
8
1
[1]
Min
-
-
-
-
PBSS4350SPN
5
4
Typ
-
-
-
95
CEsat
Symbol
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
140
50
2.7
5
TR1
8
1
7
2
Version
SOT96-1
006aaa985
TR2
6
3
Unit
V
A
A
m
5
4
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