PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
6. Thermal characteristics
PBSS4350SPN_1
Product data sheet
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
typical values
5
duty cycle =
10
4
Table 7.
[1]
[2]
[3]
0.75
0.33
0.05
0.02
0.01
Symbol
Per transistor
R
R
Per device
R
1.0
0.5
0.2
0.1
0
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Thermal characteristics
3
10
2
Rev. 01 — 5 April 2007
10
1
2
O
3
, standard footprint.
50 V, 2.7 A NPN/PNP low V
Conditions
in free air
in free air
1
10
[1]
[2]
[3]
[1]
[2]
[3]
PBSS4350SPN
Min
-
-
-
-
-
-
-
CEsat
10
Typ
-
-
-
-
-
-
-
2
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
p
006aaa809
(s)
Max
227
144
87
40
167
104
63
10
3
2
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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