PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 16

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
11. Soldering
PBSS4350SPN_1
Product data sheet
Fig 26. Reflow soldering footprint SOT96-1 (SO8)
Fig 27. Wave soldering footprint SOT96-1 (SO8)
solder lands
occupied area
solder lands
occupied area
0.60 (6 )
placement accurracy
Rev. 01 — 5 April 2007
placement accuracy
solder resist
board direction
1.27 (6 )
0.3 (2 )
5.50
5.50
1.20 (2 )
0.60 (8 )
50 V, 2.7 A NPN/PNP low V
0.25
0.25
1.27 (6 )
1.30
4.00
1.30
4.00
Dimensions in mm
6.60
Dimensions in mm
enlarged solder land
6.60
7.00
PBSS4350SPN
7.00
CEsat
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
sot096-1_fw
sot096-1_fr
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