PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 11

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
PBSS4350SPN_1
Product data sheet
Fig 13. TR2 (PNP): DC current gain as a function of
Fig 15. TR2 (PNP): Base-emitter voltage as a function
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
h
(V)
FE
BE
600
400
200
1.2
0.8
0.4
0
0
V
collector current; typical values
V
of collector current; typical values
10
10
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
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006aaa979
3
I
3
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 5 April 2007
4
4
Fig 14. TR2 (PNP): Collector current as a function of
Fig 16. TR2 (PNP): Base-emitter saturation voltage as a
V
50 V, 2.7 A NPN/PNP low V
(1) T
(2) T
(3) T
BEsat
(A)
(V)
I
C
1.4
1.0
0.6
0.2
5
4
3
2
1
0
T
collector-emitter voltage; typical values
10
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
B
1
= 20
= 25 C
= 55 C
= 25 C
= 100 C
I
B
126
112
98
84
70
56
(mA) = 140
0.4
1
(1)
(2)
(3)
0.8
10
PBSS4350SPN
10
1.2
2
CEsat
© NXP B.V. 2007. All rights reserved.
10
(BISS) transistor
1.6
006aaa978
006aaa980
V
3
I
C
CE
(mA)
42
28
14
(V)
10
2.0
4
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