PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
PBSS4350SPN_1
Product data sheet
Fig 9. TR1 (NPN): Collector-emitter saturation voltage
Fig 11. TR1 (NPN): Collector-emitter saturation
R
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
( )
10
10
10
10
10
10
10
10
1
1
1
2
3
10
3
2
1
2
10
I
as a function of collector current; typical values
I
resistance as a function of collector current;
typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
(1)
(2)
(3)
10
10
2
2
(1)
(2)
(3)
10
10
006aaa972
006aaa974
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 5 April 2007
4
4
Fig 10. TR1 (NPN): Collector-emitter saturation voltage
Fig 12. TR1 (NPN): Collector-emitter saturation
V
R
50 V, 2.7 A NPN/PNP low V
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
1
1
1
2
3
10
3
2
1
2
10
T
as a function of collector current; typical values
T
resistance as a function of collector current;
typical values
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
(1)
(2)
(3)
10
10
PBSS4350SPN
(1)
(2)
(3)
10
10
2
2
CEsat
© NXP B.V. 2007. All rights reserved.
10
10
(BISS) transistor
006aaa973
3
006aaa975
3
I
I
C
C
(mA)
(mA)
10
10
4
4
10 of 19