MT48LC16M16A2P-75 L:D TR Micron Technology Inc, MT48LC16M16A2P-75 L:D TR Datasheet - Page 20

• Manufacturer Part Number: MT48LC16M16A2P-75 L:D TR
• Description: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M16A2P-75 L:D TR

• Package: 54TSOP-II
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1191-2

Table 6: Thermal Impedance Simulated Values
Figure 10: Example: Temperature Test Point Location, 54-Pin TSOP (Top View)
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Revision
Die
D
54-ball VFBGA
Test point
60-ball FBGA
54-pin TSOP
Package
Notes:
Substrate
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed
3. These are estimates; actual results may vary.
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
Engineering to confirm thermal impedance values.
as typical.
11.11mm
Θ JA (°C/W)
Airflow =
0m/s
64.9
51.5
40.9
81
44
67
22.22mm
20
Θ JA (°C/W)
Airflow =
Temperature and Thermal Impedance
1m/s
63.8
47.3
50.8
41.6
51.2
35.1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Θ JA (°C/W)
Airflow =
256Mb: x4, x8, x16 SDRAM
2m/s
57.6
44.5
44.8
38.1
47.8
32.2
5.08mm
© 1999 Micron Technology, Inc. All rights reserved.
Θ JB (°C/W) Θ JC (°C/W)
10.16mm
45.3
39.1
31.4
31.4
19.7
18.6
10.3
3.2
6.7