MT48LC16M16A2P-75 L:D TR Micron Technology Inc, MT48LC16M16A2P-75 L:D TR Datasheet - Page 28
MT48LC16M16A2P-75 L:D TR
Manufacturer Part Number
MT48LC16M16A2P-75 L:D TR
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
Manufacturer
Micron Technology Inc
Type
SDRAMr
Specifications of MT48LC16M16A2P-75 L:D TR
Package
54TSOP-II
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
6|5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1191-2
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Table 14: AC Functional Characteristics (-6A)
Notes 1–5 and note 7 apply to all parameters and conditions
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Parameter
Last data-in to burst STOP command
READ/WRITE command to READ/WRITE command
Last data-in to new READ/WRITE command
CKE to clock disable or power-down entry mode
Data-in to ACTIVE command
Data-in to PRECHARGE command
DQM to input data delay
DQM to data mask during WRITEs
DQM to data High-Z during READs
WRITE command to input data delay
LOAD MODE REGISTER command to ACTIVE or REFRESH command
CKE to clock enable or power-down exit setup mode
Last data-in to PRECHARGE command
Data-out High-Z from PRECHARGE command
Electrical Specifications – AC Operating Conditions
28
CL = 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
t
ROH(3)
t
t
t
t
t
t
t
CKED
t
t
t
t
DQM
DWD
t
t
DQD
MRD
DQZ
CCD
DAL
BDL
CDL
DPL
PED
RDL
256Mb: x4, x8, x16 SDRAM
-6
1
1
1
1
4
2
0
0
2
0
2
1
2
3
© 1999 Micron Technology, Inc. All rights reserved.
Unit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
Notes
10, 13
10, 13
9, 13
11
11
11
11
11
11
11
17
11
8
8
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