MT48LC16M16A2P-75 L:D TR Micron Technology Inc, MT48LC16M16A2P-75 L:D TR Datasheet - Page 63

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R

MT48LC16M16A2P-75 L:D TR

Manufacturer Part Number
MT48LC16M16A2P-75 L:D TR
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC16M16A2P-75 L:D TR

Package
54TSOP-II
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
6|5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1191-2
Figure 32: Random WRITE Cycles
Figure 33: WRITE-to-READ
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Note:
Note:
Command
Command
Address
Address
1. Each WRITE command can be issued to any bank. DQM is LOW.
1. The WRITE command can be issued to any bank, and the READ command can be to any
bank. DQM is LOW. CL = 2 for illustration.
CLK
CLK
DQ
DQ
WRITE
WRITE
Bank,
Bank,
Col n
Col n
D
D
T0
T0
IN
IN
WRITE
Bank,
Col a
NOP
D
T1
T1
D
IN
IN
63
WRITE
Bank,
Col x
READ
Bank,
Col b
D
T2
T2
IN
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
Bank,
Col m
T3
T3
NOP
D
IN
D
NOP
T4
OUT
256Mb: x4, x8, x16 SDRAM
Don’t Care
NOP
D
T5
OUT
© 1999 Micron Technology, Inc. All rights reserved.
WRITE Operation

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