MT48LC16M16A2P-75 L:D TR Micron Technology Inc, MT48LC16M16A2P-75 L:D TR Datasheet - Page 23

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R

MT48LC16M16A2P-75 L:D TR

Manufacturer Part Number
MT48LC16M16A2P-75 L:D TR
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC16M16A2P-75 L:D TR

Package
54TSOP-II
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
6|5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1191-2
Table 9: Capacitance
Note 1 applies to all parameters and conditions
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
TSOP "TG" package
FBGA "FB" and "FG" packages Input capacitance: CLK
Package
Notes:
1. This parameter is sampled. V
2. PC100 specifies a maximum of 4pF.
3. PC100 specifies a maximum of 5pF.
4. PC100 specifies a maximum of 6.5pF.
5. PC133 specifies a minimum of 2.5pF.
6. PC133 specifies a minimum of 2.5pF.
7. PC133 specifies a minimum of 3.0pF.
Parameter
Input capacitance: CLK
Input capacitance: All other input-only
balls
Input/output capacitance: DQ
Input capacitance: All other input-only
balls
Input/output capacitance: DQ
biased at 1.4V.
23
DD
, V
DDQ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= +3.3V; f = 1 MHz, T
Symbol
C
C
C
C
C
C
L1
L2
L0
L1
L2
L0
256Mb: x4, x8, x16 SDRAM
Electrical Specifications
Min
2.5
2.5
1.5
1.5
4
3
A
= 25°C; pin under test
© 1999 Micron Technology, Inc. All rights reserved.
Max
3.5
3.8
3.5
3.8
6
6
Unit
pF
pF
pF
pF
pF
pF
Notes
2
3
4
5
6
7

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