FSB660A Fairchild Semiconductor, FSB660A Datasheet
FSB660A
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FSB660A Summary of contents
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... FSB660 / FSB660A C TM SuperSOT PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents continuous. Absolute Maximum Ratings* Symbol Parameter Collector-Emitter Voltage V CEO Collector-Base Voltage V CBO Emitter-Base Voltage V EBO Collector Current - Continuous ...
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... Duty Cycle 25°C unless otherwise noted Test Conditions 100 100 =100° 100 mA =500mA, V =2V FSB660 100 =200 mA FSB660 100 1MHz 100 mA 2.0% Min Max 100 10 100 100 300 250 550 FSB660A 80 40 300 350 FSB660A 300 1. f=100MHz FSB660/FSB660A Rev. B1 Units ...
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... Input/Output Capacitance vs. Reverse Bias Voltage 400 350 300 125°C 250 25°C 200 150 - 40°C 100 0 2.0V ce 125°C 25°C - 40°C 0.001 0.01 0 COLLECTOR CURRENT (A) C Collector Current - 40°C 25°C 125°C 0.01 0 1.0MHz obo C ibo 0 100 - COLLECTOR VOLTAGE ( FSB660/FSB660A Rev. B1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...