FSB660A Fairchild Semiconductor, FSB660A Datasheet - Page 3

• Manufacturer Part Number: FSB660A
• Description: TRANSISTOR PNP 60V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of FSB660A

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 75MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 75 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
1.4
1.2
0.8
0.6
0.4
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
1
0
0.01
Voltage vs Collector Current
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter Saturation
I - COLLECTOR CURRENT (A)
I - COLLECTOR CURRENT (A)
C
0.01
C
0.1
- 40°C
125°C
25°C
0.1
1000
900
800
700
600
500
400
300
200
100
0.0001
1
Current Gain vs. Collector Current
0
25°C
1
- 40°C
0.001
125°C
I - COLLECTOR CURRENT (A)
C
10
125°C
- 40°C
10
25°C
0.01
0.1
1.6
1.4
1.2
0.8
0.6
0.4
0.2
400
350
300
250
200
150
100
0.0001
50
1
0
0.1
V = 2.0V
ce
Input/Output Capacitance vs.
Base-Emitter On Voltage vs.
1
V = 2.0V
ce
0.001
Reverse Bias Voltage
I - COLLECTOR CURRENT (A)
V
0.5
Collector Current
C
CE
10
- COLLECTOR VOLTAGE (V)
1
C
0.01
C
obo
ibo
125°C
- 40°C
25°C
0.1
10
FSB660/FSB660A Rev. B1
20
1
f = 1.0MHz
V = 2.0V
ce
50
100
10