FSB660A Fairchild Semiconductor, FSB660A Datasheet - Page 2

• Manufacturer Part Number: FSB660A
• Description: TRANSISTOR PNP 60V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of FSB660A

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 75MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 75 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

*Pulse Test: Pulse Width
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
OFF CHARACTERISTICS
BV
BV
BV
I
I
ON CHARACTERISTICS*
h
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
f
CBO
EBO
T
Symbol
FE
CE(sat)
BE(sat)
BE(on)
obo
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
300 s, Duty Cycle
Parameter
T
2.0%
A = 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
=500mA, V
= 100 A
= 10 mA
= 100 A
= 100 mA, V
= 1 A, V
= 2 A, V
= 1 A, I
= 2 A, I
= 1 A, I
= 1 A, V
= 100 mA,V
= 30 V
= 30 V, T
= 4V
= 10 V, I
Test Conditions
B
B
B
CE
CE
CE
=200 mA FSB660
= 100 mA
= 100 mA
E
CE
= 2 V
= 2 V
= 2 V
A
CE
=100°C
= 0, f = 1MHz
CE
=2V FSB660
= 5 V, f=100MHz
= 2 V
FSB660A
FSB660A
Min
100
250
60
60
70
80
40
75
5
FSB660/FSB660A Rev. B1
300
550
Max
1.25
100
100
300
350
300
10
30
1
Units
mV
nA
uA
nA
pF
V
V
V
V
V
-
-